Pulsation regions near the static border of optically injected semiconductor lasers using numerical analysis

Abstract

In this thesis, we analyze the technique of injection for the generation of optical pulses, as it is believed to have distinct result in a rich and diverse set of dynamical behaviors. The study focuses primarily on identifying and exploiting pulsing regimes, which can be beneficial for a wide range of applications or can lead to undesired instabilities. The thesis develops a novel multi-metric method to automatically identify pulsing regimes in the parameter space. The method is applied to extensive numerical simulations to demonstrate that these regimes occur in the vicinity of the static synchronization boundary. Additionally, analyzing these pulsing regimes, the study identifies pulsations with repetition rates ranging from several MHz up to more than 1 GHz. The effect of the linewidth enhancement factor and the slave-laser bias current is also analyzed, revealing that a linewidth enhancement factor of 3 and a higher bias current lead to broader regions of pulsation regimes. Finally, some simulation results are presented using the rate equations considering the spontaneous emission and the Langevin forces.